PART |
Description |
Maker |
2N5952 2N5952D74Z |
N-Channel RF Amplifier N-Channel RF Ampifier BNC FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 8; FREQUENCY RANGE: 2 - 500 MHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.50 MAXIMUM; MAXIMUM INSERTION
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
AWS5503 AWS5503S15 |
The AWS5503 is a Single Pole Double Throw (SPDT) GaAs MMIC assembled in a MSOP-8 plastic package. GaAs IC High Power SPDT Reflective Switch Positive Control DC-3 GHz
|
Anadigics Inc
|
NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器,QFN封装
|
Mimix Broadband, Inc.
|
CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
MGF0907B 0907B MGF0907 |
L,S BAND POWER GaAs FET From old datasheet system L, S BAND POWER GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HMC-APH510 |
GaAs HEMT MMIC POWER AMPLIFIER GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz
|
Hittite Microwave Corporation
|